TXDV1212RG datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

TXDVxx12

2/7

Doc ID 18272 Rev 2

Characteristics

Table 2.

Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (180° conduction angle)

Tc = 90 °C

VDRM

VRRM

Repetitive peak off-state voltage

TXDV812

Tj = 125 °C

800

TXDV1212

1200

ITSM

Non repetitive surge peak on-state current

tp = 2.5 ms

Tj = 25 °C

170

tp = 8.3 ms

125

tp = 10 ms

120

I2tI2t value for fusing

tp = 10 ms

A2S

dI/dt

Critical rate of rise of on-state current

IG = 500 mA dIG/dt = 1 A/µs

F = 50 Hz

100

A/µs

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

VINS(RMS)

(1) Insulation rms voltage

2500

A1, A2, gate terminals to case for 1 minute

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

TXDV812

TXDV1212

IGT

VD = 12 V DC, RL = 33 Ω

I-II-III

MAX.

100

VGT

I-II-III

MAX.

1.5

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 110 °C

I-II-III

MIN.

0.2

tgt

VD = VDRM IG = 500 mA dIG/dt = 3 A/µs

I-II-III

TYP.

2.5

µs

IG = 1.2 x IGT

I-III

TYP.

100

200

(1)

IT = 500 mA Gate open

MAX.

100

dV/dt (1)

Linear slope up to:

VD = 67% VDRM Gate open

Tj = 125 °C

MIN.

kV/µs

(dI/dt)c (1)

(dV/dt)c = 10 V/µs

Tj = 110 °C

MIN.

42.5

A/ms

VTM

(1)

ITM = 17 A tp = 380 µs

MAX.

1.95

Vto

(1)

Threshold voltage

MAX.

1.21

(1)

Dynamic resistance

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

0.01

Tj = 110 °C

For either polarity of electrode A2 voltage with reference to electrode A1.

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