DocID024400 Rev 1

5/13

STL12P6F6

Electrical characteristics

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

I

SD

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

3

12

A

A

V

SD

(2)

2.

Pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 3 A, V

GS

= 0

-

1.1

V

t

rr

Reverse recovery time

I

SD

= 5 A, di/dt = 100 A/μs

V

DD

= 16 V, T

j

= 150 °C

(see

Figure 4)

-20

ns

Q

rr

Reverse recovery charge

-

17.8

nC

I

RRM

Reverse recovery current

-

1.8

A