STP24N60M2 datasheet(3/22 Pages) STMICROELECTRONICS

3 / 22 page

DocID023964 Rev 4

3/22

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

150

dv/dt (2)

ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

I2PAK

TO-220

TO-247

Rthj-case Thermal resistance junction-case max

0.83

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax )

3.5

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

180

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