AM29F800B datasheet(22/39 Pages) AMD

22 / 39 page

Am29F800B

P R E L I M I NARY

DC CHARACTERISTICS

TTL/NMOS Compatible

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.

2. ICC active while Embedded Erase or Embedded Program is in progress.

3. Not 100% tested.

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Load Current

VIN = VSS to VCC, VCC = VCC max

±1.0

µA

ILIT

A9 Input Load Current

VCC = VCC max; A9 = 12.5 V

µA

ILO

Output Leakage Current

VOUT = VSS to VCC, VCC = VCC max

±1.0

µA

ICC1

VCC Active Read Current

(Note 1)

CE# = VIL, OE# = VIH, VCC = VCC max,

f = 5 MHz, Byte Mode

CE# = VIL, OE# = VIH, VCC = VCC max,

f = 5 MHz, Word Mode

ICC2

VCC Active Write Current

(Notes 2 and 3)

CE# = VIL, OE# = VIH, VCC = VCC max

ICC3

VCC Standby Current

CE#, OE#, and RESET# = VIH,

VCC = VCC max,

0.4

VIL

Input Low Voltage

–0.5

0.8

VIH

Input High Voltage

2.0

VCC

+ 0.5

VID

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 5.0 V

11.5

12.5

VOL

Output Low Voltage

IOL = 5.8 mA, VCC = VCC min

0.45

VOH

Output High Voltage

IOH = –2.5 mA, VCC = VCC min

2.4

VLKO

Low VCC Lock-Out Voltage

(Note 3)

3.2

4.2

AM29F800B Datasheet(PDF) 22 Page - Advanced Micro Devices

AM29F800B Datasheet(HTML) 22 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39

Datasheet Download

Link URL