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2SC2714 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC2714
Description  High Frequency Amplifier Applications
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2714 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC2714
2010-08-24
2
L1: 0.8 mm
φ silver plated copper wire, 4T, 10ID, 8 length
y Parameter (typ.)
(1)
Common emitter (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C)
Characteristics
Symbol
Typ.
Unit
Input conductance
gie
2.9
mS
Input capacitance
Cie
10.2
pF
Reverse transfer admittance
⎪yre⎪
0.33
mS
Phase angle of reverse transfer
admittance
θre
−90
°
Forward transfer admittance
|yfe|
40
mS
Phase angle of forward transfer
admittance
θfe
−20
°
Output conductance
goe
45
μS
Output capacitance
Coe
1.1
pF
(2)
Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz, Ta = 25°C)
Characteristics
Symbol
Typ.
Unit
Input conductance
gib
34
mS
Input capacitance
Cib
−10
pF
Reverse transfer admittance
⎪yrb⎪
0.27
mS
Phase angle of reverse transfer
admittance
θrb
−105
°
Forward transfer admittance
|yfb|
34
mS
Phase angle of forward transfer
admittance
θfb
165
°
Output conductance
gob
45
μS
Output capacitance
Cob
1.1
pF
Figure1
NF, Gpe Test Circuit



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