2SC5359-R datasheet(2/4 Pages) TOSHIBA

Part #	2SC5359-R

Description	Power Amplifier Applications

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC5359

2006-11-10

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 230 V, IE = 0

―

5.0

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

5.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 50 mA, IB = 0

230

―

hFE (1)

(Note)

VCE = 5 V, IC = 1 A

―

160

DC current gain

hFE (2)

VCE = 5 V, IC = 7 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 8 A, IB = 0.8 A

―

0.4

3.0

Base-emitter voltage

VBE

VCE = 5 V, IC = 7 A

―

1.0

1.5

Transition frequency

VCE = 5 V, IC = 1 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

200

―

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Marking

2SC5359

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2SC5359-R Datasheet(PDF) 2 Page - Toshiba Semiconductor

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