STM32L151VD datasheet(120/140 Pages) STMICROELECTRONICS

120 / 140 page

Electrical characteristics

STM32L151xD STM32L152xD

120/140

Doc ID 022027 Rev 6

GBW

Bandwidth

Normal mode

VDD>2.4 V

400

1000

3000

kHZ

Low power mode

150

300

800

Normal mode

VDD<2.4 V

200

500

2200

Low power mode

150

800

Slew rate

Normal mode

VDD>2.4 V

(between 0.1 V and

VDD-0.1 V)

-700

V/ms

Low power mode

VDD>2.4 V

100

Normal mode

VDD<2.4 V

-300

Low power mode

Open loop gain

Normal mode

100

Low power mode

110

RLOAD

Resistive load

Normal mode

VDD<2.4 V

Low power mode

CLOAD

Capacitive load

VOHSAT

High saturation

voltage

Normal mode

ILOAD = max or

RLOAD = min

VDD-

100

Low power mode

VDD-50

VOLSAT

Low saturation

voltage

Normal mode

100

low power mode

ϕm

Phase margin

Gain margin

-12

tOFFTRIM

Offset trim time: during calibration,

minimum time needed between two

steps to have 1 mV accuracy

-1

tWAKEUP

Wakeup time

Normal mode

CLOAD ≤ 50 pf,

RLOAD ≥ 4 kΩ

-10

µs

Low power mode

CLOAD ≤ 50 pf,

RLOAD ≥ 20 kΩ

-30

Operating conditions are limited to junction temperature (0 °C to 105 °C) when VDD is below 2 V. Otherwise, the operating

temperature range is 105 °C to -40 °C.

Data based on characterization results, not tested in production.

Table 68.

Operational amplifier characteristics (continued)

Symbol

Parameter

Condition(1)

Min(2)

Typ

Max(2)

Unit

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