STP5NK65ZFP datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

Electrical ratings

STP5NK65ZFP

2/12

Doc ID 15565 Rev 1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

4.5 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

3.1 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

18 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.6

W/°C

VESD(G-S)

Gate source ESD

(HBM-C=100 pF, R=1.5 k

Ω)

2000

dv/dt (3)

ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

Table 3.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case Max

Rthj-amb

Thermal resistance junction-ambient Max

62.5

Maximum lead temperature for soldering

purpose

300

Table 4.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

4.2

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

170

STP5NK65ZFP Datasheet(PDF) 2 Page - STMicroelectronics

STP5NK65ZFP Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL