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STB80N20M5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB80N20M5 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STB80N20M5, STP80N20M5 Electrical ratings Doc ID 15734 Rev 2 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 61 A ID Drain current (continuous) at TC = 100 °C 38 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 244 A PTOT Total dissipation at TC = 25 °C 190 W IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 20 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 500 mJ dv/dt (2) 2. ISD ≤ 61 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 D2PAK Rthj-case Thermal resistance junction-case max 0.66 °C/W Rthj-amb Thermal resistance junction-ambient max 62.50 °C/W Rthj-pcb Thermal resistance junction-pcb max 30 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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