IRFS4227TRLPBF datasheet(6/10 Pages) IRF

6 / 10 page

IRFS/SL4227PbF

www.irf.com

Fig 18.

Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

VDD

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Inductor Current

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

V(BR)DSS

IAS

0.01

Ω

D.U.T

VDS

- VDD

DRIVER

15V

20V

VGS

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

Vds

Vgs

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

VCC

DUT

IRFS4227TRLPBF Datasheet(PDF) 6 Page - International Rectifier

IRFS4227TRLPBF Datasheet(HTML) 6 Page - International Rectifier

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