CMLDM7005

SURFACE MOUNT SILICON

DUAL N-CHANNEL

ENHANCEMENT-MODE

MOSFET

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State - Note 1)

ID

650

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.3

A

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 2)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

1.0

μA

IDSS

VDS=16V, VGS=0

100

nA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.5

1.1

V

VSD

VGS=0, IS=200mA

1.1

V

rDS(ON)

VGS=4.5V, ID=600mA

0.14

0.23

Ω

rDS(ON)

VGS=2.5V, ID=500mA

0.2

0.275

Ω

rDS(ON)

VGS=1.8V, ID=350mA

0.7

Ω

gFS

VDS=10V, ID=400mA

1.0

S

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM7005

consists of dual N-Channel enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer very low

rDS(ON) and low threshold voltage.

MARKING CODE: CC7

FEATURES:

• ESD protection up to 2kV (Human Body Model)

• 350mW power dissipation

• Very low rDS(ON)

• Low threshold voltage

• Logic level compatible

• Small, SOT-563 surface mount package

• Complementary dual P-Channel device: CMLDM8005

APPLICATIONS:

• Load switch/Level shifting

• Battery charging

• Boost switch

• Electro-luminescent backlighting

SOT-563 CASE

R3 (10-June 2013)

www.centr a lsemi.com