LND150

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and amplification.

N-Channel Depletion-Mode

DMOS FET

Absolute Maximum Ratings

Parameter

Value

Drain-to-source

BV

DSX

Drain-to-gate

BV

DGX

Gate-to-source

±20V

Operating and storage temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Device

Package Options

BV

(V)

R

DS(ON)

(max)

(KΩ)

I

DSS

(min)

(mA)

TO-236AB (SOT-23)

TO-92

TO-243AA (SOT-89)

LND150

LND150K1-G

LND150N3-G

LND150N8-G

500

1.0

1.0

-G indicates package is RoHS compliant (‘Green’)

TO-92 (N3)

Product Marking

TO-243AA (SOT-89) (N8)

= “Green” Packaging

Features

ISS

Applications

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

►

►

►

►

►

►

GATE

SOURCE

DRAIN

TO-243AA (SOT-89) (N8)

GATE

SOURCE

DRAIN

SOURCE

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Si

LN

D 1 5 0

Y Y W W

TO-92 (N3)

Packages may or may not include the following marks: Si or

Pin Configurations

TO-236AB (SOT-23) (K1)

TO-236AB (SOT-23) (K1)

SOURCE

DRAIN

GATE

= “Green” Packaging