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SPP3095 Datasheet(PDF) 3 Page - SYNC POWER Crop. |
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SPP3095 Datasheet(HTML) 3 Page - SYNC POWER Crop. |
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3 / 8 page ![]() 2010/06/01 Ver.4 Page 3 SPP3095 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless o ℃ therwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=85℃ -5 uA VGS=-10V,ID=-8A 0.083 0.100 Drain-Source On-Resistance RDS(on) VGS=-4.5V,ID=-6A 0.130 0.150 Ω Forward Transconductance gfs VDS=-10V,ID=-8A 8 S Diode Forward Voltage VSD IS=-2.5A,VGS =0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 5.8 10 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≡-8A 1.5 nC Input Capacitance Ciss 226 Output Capacitance Coss 87 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V f=1MHz 19 pF td(on) 9 20 Turn-On Time tr 9 20 td(off) 18 35 Turn-Off Time tf VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 6 20 ns |
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