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IRFS3306TRLPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFS3306TRLPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  4/7/08 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D2Pak IRFS3306PbF TO-220AB IRFB3306PbF TO-262 IRFSL3306PbF S D G S D G S D G D D D IRFB3306PbF IRFS3306PbF IRFSL3306PbF GD S Gate Drain Source S D G VDSS 60V RDS(on) typ. 3.3m: max. 4.2m: ID (Silicon Limited) 160A c ID (Package Limited) 120A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.65 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak jk ––– 40 -55 to + 175 ± 20 1.5 10lb xin (1.1Nxm) Max. 160 c 110 c 620 120 A °C °C/W 300 184 See Fig. 14, 15, 22a, 22b, 230 14 PD - 97098B |
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