CSD19506KCS

SLPS481 – DECEMBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain-to-Source Voltage

80

V

Drain-to-Source Leakage Current

1

μA

Gate-to-Source Leakage Current

100

nA

Gate-to-Source Threshold Voltage

2.1

2.5

3.2

V

2.2

2.8

m

Ω

Drain-to-Source On Resistance

2.0

2.3

m

Ω

Transconductance

297

S

Dynamic Characteristics

Input Capacitance

9380

12200

pF

Output Capacitance

2260

2940

pF

Reverse Transfer Capacitance

42

55

pF

Series Gate Resistance

1.3

2.6

Ω

Gate Charge Total (10 V)

120

156

nC

Gate Charge Gate to Drain

20

nC

Gate Charge Gate to Source

37

nC

25

nC

Output Charge

345

nC

Turn On Delay Time

19

ns

Rise Time

11

ns

Turn Off Delay Time

30

ns

Fall Time

10

ns

Diode Characteristics

Diode Forward Voltage

0.9

1.1

V

Reverse Recovery Charge

525

nC

di/dt = 300 A/

μs

Reverse Recovery Time

107

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.4

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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