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BFU725FN1-115 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFU725FN1-115
Description  NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
PDF  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFU725FN1-115 Datasheet(HTML) 2 Page - NXP Semiconductors

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BFU725F_N1_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 13 July 2009
2 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1]
Tsp is the temperature at the solder point of the emitter lead.
[2]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2.
Pinning information
3.
Ordering information
4.
Marking
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
70
-
fF
fT
transition frequency
IC = 25 mA; VCE =2V;
f = 2 GHz; Tamb =25 °C
-
55
-
GHz
Gp(max)
maximum power gain
IC = 25 mA; VCE =2V;
f = 5.8 GHz; Tamb =25 °C
[2] -18
-
dB
NF
noise figure
IC = 5 mA; VCE =2V;
f = 5.8 GHz;
Γ
S = Γopt;
Tamb =25 °C
-
0.7
-
dB
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Discrete pinning
Pin
Description
Simplified outline
Graphic symbol
1
emitter
2
base
3
emitter
4
collector
1
2
34
mbb159
4
1, 3
2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BFU725F/N1
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
Table 4.
Marking
Type number
Marking
Description
BFU725F/N1
B7*
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China



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