◎ SEMIHOW REV.A2 JUN 2007

FEATURES

HSC106D/M

Sensitive Gate Silicon Controlled Rectifier

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control ; process

and remote control, and warning systems where reliability of

operation is important.

General Description

400V / 600V

1.Cathode

Symbol

2.Anode

3.Gate

V

400

600

Repetitive Peak Off-State Voltage (Reverse)

HSC106D

HSC106M

℃

-40 to +110

Operating Junction Temperature

℃

-40 to +150

Storage Temperature Range

A

0.2

Forward Peak Gate Current

(Pulse Width ≤1.0 μsec, Tc=80℃)

V

6.0

Reverse Peak Gate Voltage

W

0.1

Forward Average Gate Power Dissipation

(Pulse Width ≤1.0μsec, Tc=80℃)

W

0.5

Forward Peak Gate Power Dissipation

(Pulse Width ≤1.0μsec,Tc=80℃)

A

1.65

Circuit Fusing Considerations (t=8.3mS)

I

A

20

Surge On-State Current

(1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 °C)

A

2.55

On-State Average Current

A

4.0

On-State R.M.S Current

V

400

600

Repetitive Peak Off-State Voltage (Forward) HSC106D

HSC106M

Units

Value

Parameter

Symbol

Absolute Maximum Ratings

(

HSC106D/M

1

2

3

1. K

2. A

3. G

TO-126