IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH12N100L

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

3.0

5.0

S

C

iss

2500

pF

C

oss

V

300

pF

C

rss

95

pF

t

d(on)

30

ns

t

r

55

ns

t

d(off)

110

ns

t

f

65

ns

Q

g(on)

155

nC

Q

gs

V

35

nC

Q

gd

55

nC

R

thJC

R

thCS

0.21

°C/W

Safe-Operating-Area Specification

Symbol

Test Conditions

Characteristic Values

Min.

Typ.

Max.

SOA

V

200

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

12

A

I

SM

Repetitive, Pulse Width Limited by T

JM

48

A

V

SD

I

1.5

V

t

rr

1000

ns

Resistive Switching Times

V

R

I

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC