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SWF12N65B Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

Part # SWF12N65B
Description  N-channel TO-220F MOSFET
PDF  5 Pages
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Manufacturer  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Direct Link  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWF12N65B Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
2/5
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
650
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.8
V/oC
IDSS
Drain to source leakage current
VDS=650V, VGS=0V
1
uA
VDS=520V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
VGS=-30V, VDS=0V
-100
nA
Gate to source leakage current, reverse
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.0
4.0
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 6A
0.7
0.85
Ω
Gfs
Forward Transconductance
VDS = 20 V, ID = 6 A
7
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
1450
pF
Coss
Output capacitance
160
Crss
Reverse transfer capacitance
35
td(on)
Turn on delay time
VDS=325V, ID=12A, RG=25Ω
(note 4，5)
23
60
ns
tr
Rising time
38
80
td(off)
Turn off delay time
63
130
tf
Fall time
36
80
Qg
Total gate charge
VDS=520V, VGS=10V, ID=12A
(note 4，5)
28
50
nC
Qgs
Gate-source charge
9
Qgd
Gate-drain charge
9
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
12
A
ISM
Pulsed source current
48
A
VSD
Diode forward voltage drop.
IS=12A, VGS=0V
1.5
V
Trr
Reverse recovery time
IS=12A, VGS=0V,
dIF/dt=100A/us
456
ns
Qrr
Reverse recovery Charge
6.2
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 11mH, IAS = 12A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 12.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width
≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SAMWIN
SW12N65B



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