IRFHM830DPBF datasheet(3/8 Pages) IRF

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December 16, 2013

IRFHM830DPbF

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

VGS

TOP

10V

8.0V

4.5V

3.8V

3.5V

3.3V

3.0V

BOTTOM

2.8V

≤60μs PULSE WIDTH

Tj = 25°C

2.8V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

≤60μs PULSE WIDTH

Tj = 150°C

2.8V

VGS

TOP

10V

8.0V

4.5V

3.8V

3.5V

3.3V

3.0V

BOTTOM

2.8V

1.5

2.5

3.5

4.5

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

TJ = 25°C

TJ = 150°C

VDS = 15V

≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 20A

VGS = 10V

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

1020

3040

QG, Total Gate Charge (nC)

VDS= 24V

VDS= 15V

VDS= 6V

ID= 20A

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