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IRFHM8342PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM8342PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2013 International Rectifier August 22, 2013 IRFHM8342TRPbF D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 13 16 m VGS = 10V, ID = 17A ––– 20 25 VGS = 4.5V, ID = 14A VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25µA V GS(th) Gate Threshold Voltage Coefficient ––– -5.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 19 ––– ––– S VDS = 10V, ID = 17A Qg Total Gate Charge ––– 10 ––– nC VGS = 10V, VDS = 15V, ID = 17A Qg Total Gate Charge ––– 5.0 7.5 VDS = 15V Qgs Pre-Vth Gate-to-Source Charge ––– 1.8 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 1.7 ––– ID = 17A Qgodr Gate Charge Overdrive ––– 1.5 ––– Qoss Output Charge ––– 3.3 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 2.6 ––– td(on) Turn-On Delay Time ––– 8.1 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 30 ––– ns ID = 17A td(off) Turn-Off Delay Time ––– 7.6 ––– RG=1.8 tf Fall Time ––– 5.6 ––– Ciss Input Capacitance ––– 560 ––– VGS = 0V Coss Output Capacitance ––– 102 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 48 ––– ƒ = 1.0MHz Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 6.2 RJC (Top) Junction-to-Case ––– 50 °C/W RJA Junction-to-Ambient ––– 49 RJA (<10s) Junction-to-Ambient ––– 34 Thermal Resistance Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 20 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 112 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 17A, VGS = 0V trr Reverse Recovery Time ––– 9.4 14 ns TJ = 25°C, IF = 17A, VDD = 15V Qrr Reverse Recovery Charge ––– 5.8 8.7 nC di/dt = 330A/µs Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 21 mJ |
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