IRFS7430TRLPBF datasheet(2/11 Pages) IRF

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IRFS/SL7430PbF

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November 19, 2013

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.15mH

RG = 50Ω, IAS = 100A, VGS =10V.

ISD ≤ 100A, di/dt ≤ 990A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθ is measured at TJ approximately 90°C..

This value determined from sample failure population,

starting TJ = 25°C, L= 0.15mH, RG = 50Ω, IAS = 100A, VGS =10V.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application note #AN-994.

Absolute Maximum Ratings

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

IDM

Pulsed Drain Current d

PD @TC = 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy

EAS (tested)

Single Pulse Avalanche Energy Tested Value

IAR

Avalanche Current

Ãd

EAR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.40

RθJA

Junction-to-Ambient (PCB Mount, steady-state)

–––

Max.

426

301

1524

195

1360

-55 to + 175

± 20

2.5

°C/W

°C

300

760

See Fig. 15, 16, 22a, 22b

375

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

∆V(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.014

–––

V/°C

–––

0.97

1.2

Ω

–––

1.2

–––

VGS = 6.0V, ID = 50A g

VGS(th)

Gate Threshold Voltage

2.2

–––

3.9

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

2.1

–––

Ω

Static Drain-to-Source On-Resistance

VGS = 20V

VGS = -20V

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1.0mA

VDS = VGS, ID = 250µA

VGS = 10V, ID = 100A g

RDS(on)

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