STW18N65M5 datasheet(3/19 Pages) STMICROELECTRONICS

Part #	STW18N65M5

Description	N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 19 page

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Electrical ratings

Doc ID 022879 Rev 3

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

I²PAK

TO-220 TO-247 TO-220FP

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

15 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

9.4

9.4 (1)

IDM

(1)

Drain current (pulsed)

60 (1)

PTOT

Total dissipation at TC = 25 °C

110

dv/dt (2)

ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

I²PAK TO-220 TO-247 TO-220FP

Rthj-case Thermal resistance junction-case max

1.14

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID= IAR; VDD = 50 V)

210

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