MJE13002G-A-T92-R datasheet(3/9 Pages) UTC

3 / 9 page

MJE13002

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R204-014.C

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC=10 mA , IB=0

300

VCEV=Rated Value, VBE(off)=1.5 V

Collector Cutoff Current

ICEV

VCEV=Rated Value,

VBE(off)=1.5V,Tc=100°C

SECOND BREAKDOWN

Second Breakdown Collector Current with

bass forward biased (See Figure 5)

IS/IB

Clamped Inductive SOA with base reverse

biased (See Figure 6)

RBSOA

hFE1

IC=0.5 A, VCE=2 V

DC Current Gain

hFE2

IC=1 A, VCE=2 V

IC=0.5A, IB=0.1A

0.5

IC=1A, IB=0.25A

IC=1.5A, IB=0.5A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.25A,TC=100°C

IC=0.5A, IB=0.1A

IC=1A, IB=0.25 A

1.2

Base-Emitter Saturation Voltage

V BE(SAT)

IC=1A, IB=0.25A,TC=100°C

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=100mA, VCE=10 V, f=1MHz

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

SWITCHING CHARACTERISTICS (TABLE 1)

Delay Time

0.05 0.1

μs

Rise Time

0.5

μs

Storage Time

μs

Fall Time

VCC=125V, IC=1A,

IB1=IB2=0.2A, tP=25μs,

Duty Cycle≤1%

0.4

0.7

μs

INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)

Storage Time

tsv

1.7

μs

Crossover Time

0.29 0.75

μs

Fall Time

tfi

IC=1A,Vclamp=300V,

IB1=0.2A,VBE(off)=5V,TC=100°C

0.15

μs

CLASSIFICATION OF hFE1

RANK

RANGE

8 ~ 16

15 ~ 21

20 ~ 26

25 ~ 31

30 ~ 36

35 ~ 40

MJE13002G-A-T92-R Datasheet(PDF) 3 Page - Unisonic Technologies

MJE13002G-A-T92-R Datasheet(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL