| Electronic Components Datasheet Search |
|
IXTY64N055T Datasheet(PDF) 2 Page - IXYS Corporation |
|
|
|||||||||||||||||||||||||||||
IXTY64N055T Datasheet(HTML) 2 Page - IXYS Corporation |
|
2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTP64N055T IXTY64N055T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 0.5 ID25, Note 1 17 28 S C iss 1420 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 255 pF C rss 68 pF t d(on) 19 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID = 10 A 52 n s t d(off) R G = 18Ω (External) 37 n s t f 30 n s Q g(on) 37 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 10 A 10 nC Q gd 11 nC R thJC 1.15 °C/W R thCS TO-220 0.5 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 64 A I SM Repetitive 170 A V SD I F =25 A, VGS = 0 V, Note 1 1.2 V t rr I F = 25 A, -di/dt = 100 A/μs30 ns V R = 30 V, VGS = 0 V Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-252 (IXTY) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 1 Anode 2 NC 3 Anode 4 Cathode Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXTP) Outline PRELIMINARYTECHNICAL INFORMATION The product presented herein is under development. The Technical Specifica- tions offered are derived from data gathered during objective characteriza- tions of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478B2 7,071,537 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |