1

TPV596A

MOTOROLA RF DEVICE DATA

The RF Line

UHF Linear Power Transistor

. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and

500 mW Band V TV transposer stages. Gold metallization and diffused emitter

ballast resistors are used to enhanced reliability, ruggedness and linearity.

• Band IV and V (470–860 MHz)

• 0.5 W — Pref @ –58 dB IMD

• High Gain — 12 dB Typ, Class A, f = 860 MHz

• Gold Metallization for Reliability

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

24

Vdc

Collector–Base Voltage

VCBO

45

Vdc

Emitter–Base Voltage

VEBO

3.5

Vdc

Collector Current — Continuous

IC

0.7

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

8.75

0.05

Watts

W/

°C

Operating Junction Temperature

TJ

200

°C

Storage Temperature Range

Tstg

– 65 to + 200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (TC = 70°C)

R

θJC

20

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 20 mA, IB = 0)

V(BR)CEO

24

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 1.0 mA, IE = 0)

V(BR)CBO

45

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 4.0 mA, IC = 0)

V(BR)EBO

3.5

—

—

Vdc

Emitter–Base Leakage Current

(VEB = 2.0 V)

IEBO

—

—

0.25

mA

Collector Cutoff Current

(VCB = 28 V, IE = 0)

ICBO

—

—

1.0

mAdc

Collector–Emitter Breakdown Voltage

(IC = 20 mA, RBE = 10 Ω)

V(BR)CER

50

—

—

Vdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 5.0 V)

hFE

15

—

120

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 28 V, IE = 0, f = 1.0 MHz)

Cob

—

—

5.0

pF

(continued)

Order this document

by TPV596A/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TPV596A

0.5 W, 470 – 860 MHz

UHF LINEAR

POWER TRANSISTOR

CASE 244–04, STYLE 1

(.280 SOE)