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HAT1091C Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # HAT1091C
Description  Silicon P Channel MOS FET Power Switching
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT1091C Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAT1091C
R07DS1172EJ0500 Rev.5.00
Page 4 of 6
Mar 19, 2014
500
300
400
200
100
–25
0
25
50
75
100 125
150
0
–0.3
–3
–10
10
3
1
0.3
0.1
–0.1
–1
0
–20
1000
0
0
0
–10
-2
–20
-4
–30
-6
0.8
1.6
2.4
3.2
4
-8
100
1000
10
1
–0.01 –0.03 –0.1 –0.3
–1
–10
–3
300
100
30
10
Ciss
Coss
Crss
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
–10
–4
–2
–6
–8
–2.5 V
–0.8 A
–0.5 A
–5 V
–10 V
–40
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Case Temperature
Tc (
°C)
Drain Current
ID (A)
Gate Charge
Qg (nC)
Dynamic Input Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage
VDS (V)
Switching Characteristics
Drain Current
ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage
VSD (V)
Pulse Test
VGS = 0, 10 V
td(on)
tf
tr
td(off)
VGS = –4.5 V, VDD = –10 V
RG = 4.7 Ω, Ta = 25°C
VDD = –5 V
–10 V
–20 V
VDD = –5 V
–10 V
–20 V
VDS
VGS
ID = –1.5 A
VGS = 0
f = 1 MHz
Tc = –25
°C
25
°C
75
°C
VDS = –10 V
Pulse Test
Pulse Test
VGS = –4.5 V
ID = –1.5, –0.5, –0.8 A
ID = –1.5 A



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