2SD2686L-AB3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SD2686

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-050.a

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

60±10

Emitter-Base Voltage

VEBO

Collector Current

Pulse

ICP

Base Current

0.5

Power Dissipation (Note 2)

500

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Mounted on an FR4 board (glass-epoxy; 1.6mm thick; Cu area, 645mm

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA, IB=0

Collector Cut-Off Current

ICBO

VCB=45V, IE=0

μA

ICEO

VCE=45V, IE=0

μA

Emitter Cut-Off Current

IEBO

VEB=8V, IC=0

0.8

4.0

DC Current Gain

hFE

VCE=2V, IC=1.0A

2000

Collector-Emitter Saturation Voltage

VCE(sat)

IC=0.5A, IB=1mA

1.2

IC=1.0A, IB=1mA

1.5

Base-Emitter Saturation Voltage

VBE(sat)

IC=1.0A, IB=1mA

2.0

Turn-On Time

tON

See specified test circuit.

0.4

μs

Storage Time

tSTG

4.0

μs

Fall Time

0.6

μs

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