5N60Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-909.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 2)

5

A

Continuous Drain Current

5

A

Pulsed Drain Current (Note 2)

20

A

Avalanche Energy

Single Pulsed (Note 3)

210

mJ

Repetitive (Note 2)

10

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

36

W

Junction Temperature

+150

°C

Operation Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.47

°C/W