2SC2625B datasheet(1/3 Pages) NELLSEMI

Part #	2SC2625B

Description	Silicon NPN triple diffusion planar transistor

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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1 / 3 page

12

30

J

2S

C

26

25

FEATURES

High collector to base voltage VCBO

Satisfactory linearity of foward current transfer ratio hFE

TO-3P package which can be installed to the heat sink

APPLICATIONS

SEMICONDUCTOR

RoHS

Silicon NPN triple diffusion planar transistor

Nell High Power Products

2SC2625B

(High voltage switching transistor)

Switching regulator and general purpose

ABSOLUTE MAXIMUM RATINGS (T = 25°C)

C

UNIT

V

PC

VCEO

Tstg

PARAMETER

Collector to emitter voltage

ºC

7

10

Collector current

Base current

Collector power dissipation

Junction temperature

High-speed switching

450

400

80

3

VALUE

400

VCBO

Tj

-55 to 150

150

A

Collector to base voltage

Emitter to base voltage

SYMBOL

VCEO(SUS)

VEBO

IC

IB

T = 25°C

C

Storage temperature

W

with one screw

15.6±0.4

9.6

2

3

1.05

+0.2

-0.1

5.45±0.1

Φ3.2 0,1

±

4.8±0.2

2.0±0.1

0.65

+0.2

-0.1

1.4

B

C

E

1

2

3

Page 1 of 3

www.nellsemi.com

All dimensions in millimeters

NPN

C

B

E

Ultrasonic generators

High frequency inverters

THERMAL CHARACTERISTICS (T = 25°C)

C

UNIT

PARAMETER

1.55

VALUE

Rth(j-c)

Thermal resistance, junction to case

SYMBOL

ºC/W

TO-3P(B)

10A/400V/80W

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2SC2625B Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd

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