5N70Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-911. D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 2)

5

A

Drain Current

Continuous

5

A

Pulsed (Note 2)

20

A

Avalanche Energy

Single Pulsed (Note 3)

100

mJ

Repetitive (Note 2)

10

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F/TO-220F1

TO-220F2

36

W

TO-251/TO-252

28

W

Junction Temperature

+150

°C

Operation Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F/TO-220F1

TO-220F2

62.5

°C/W

TO-251/TO-252

110

°C/W

Junction to Case

TO-220F/TO-220F1

TO-220F2

3.47

°C/W

TO-251/TO-252

4.53

°C/W