UFZ34L-TN3-R datasheet(3/6 Pages) UTC

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UFZ34

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-900-.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=10V, ID=17A

0.042

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

680

Output Capacitance

COSS

220

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=48V, ID=17A

(Note 4)

Gate to Source Charge

QGS

6.7

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=17A, RG=13Ω,

RD=1.8Ω (Note 2)

5.1

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

Maximum Body-Diode Pulsed Current

(Note 1)

ISM

100

Drain-Source Diode Forward Voltage

(Note 2)

VSD

TJ=25°C, IS=17A, VGS=0V

1.3

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=17A,

di/dt=100A/µs

Body Diode Reverse Recovery Charge

(Note 2)

QRR

130

200

Forward Turn-On Time

tON

Intrinsic turn-on time is negligible

(turn-on is dominated by LS+LD)

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Pulse width≤300µs, Duty cycle≤2%.

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