UF3N30Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-826. B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

300

V

Gate-Source Voltage

±20

V

Continuous Drain Current

Continuous

3

A

Pulsed

12

A

Avalanche Energy

52

mJ

Power Dissipation

50

W

Junction Temperature

+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

300

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

10

µA

Reverse

-10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

2

Ω

DYNAMIC PARAMETERS

Input Capacitance

200

pF

Output Capacitance

90

pF

Reverse Transfer Capacitance

30

pF

SWITCHING PARAMETERS

Total Gate Charge

4

nC

Gate to Source Charge

0.64

nC

Gate to Drain Charge

1.6

nC

Turn-ON Delay Time

Ω,

10

ns

Rise Time

50

ns

Turn-OFF Delay Time

30

ns

Fall-Time

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

3

A

Maximum Body-Diode Pulsed Current

12

A

Drain-Source Diode Forward Voltage

1.3

V