UF624L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

UF624

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-855.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

250

Breakdown Voltage Temperature

Coefficient

△

DSS/T

△ J Reference to 25°C, ID=1mA

0.36

V/°C

Drain-Source Leakage Current

IDSS

VDS=250V, VGS=0V

µA

VDS=200V, VGS=0V , TJ=125°C

250

µA

Gate-Source Leakage Current

IGSS

VGS=+20V, VDS=0V

±10

µA

VGS=-20V, VDS=0V

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2.6A (Note 2)

1.1

Ω

Forward Transconductance

gFS

VDS=50V, ID=2.6A (Note 2)

1.5

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

260

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=200V, ID=4.4A

Gate to Source Charge

QGS

2.7

Gate to Drain Charge

QGD

7.8

Turn-ON Delay Time

tD(ON)

VDD=125V, ID=4.4A, RG=18Ω,

RD=28Ω

7.0

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

4.4

Maximum Body-Diode Pulsed Current

(Note 1)

ISM

Drain-Source Diode Forward Voltage

VSD

TJ=25°C, IS=4.4A, VGS=0V (Note

1.8

Body Diode Reverse Recovery Time

tRR

TJ=25°C, IF=4.4A, dI/dt=100A/µs

(Note 2)

200 400

Body Diode Reverse Recovery Charge

QRR

0.93 1.9

µC

Forward Turn-On Time

tON

Intrinsic turn-on time is negligible (turn-on is dominated by

LS and LD)

Notes:1. Repetitive rating; pulse width limited by maximum junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.

UF624L-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

UF624L-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL