UT8205AZ

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-886.b

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Drain Current (Note 2)

Continuous

6

A

Pulsed

20

A

SOT-26

1.14

W

SOP-8

1.6

W

TSSOP-8

1

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note)

SOT-26

110

°C/W

SOP-8

78

°C/W

TSSOP-8

125

°C/W

Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Breakdown Voltage Temperature

Coefficient

ΔBVDSS

ΔTJ

0.03

V/°C

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±10

μA

ON CHARACTERISTICS

Gate Threshold Voltage

0.5

1.5

V

Drain-Source On-State Resistance (Note)

28

mΩ

38

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1035

pF

Output Capacitance

320

pF

Reverse Transfer Capacitance

150

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note)

30

ns

Turn-ON Rise Time

70

ns

Turn-OFF Delay Time

40

ns

Turn-OFF Fall-Time

65

ns

Total Gate Charge(Note)

23

nC

Gate Source Charge

4.5

nC

Gate Drain Charge

7

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

1.2

V

Diode Continuous Forward Current

1.54

A

Note: Surface mounted on 1 in