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HBC123JS6R Datasheet(PDF) 2 Page - Cystech Electonics Corp.

Part # HBC123JS6R
Description  Dual NPN Digital Transistors
PDF  5 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

HBC123JS6R Datasheet(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C360S6R
Issued Date : 2009.04.30
Revised Date : 2011.02.22
Page No. : 2/5
HBC123JS6R
CYStek Product Specification
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply Voltage
VCC
50
V
Input Voltage
VIN
-5~+12
V
IO
100
mA
Output Current
IO(max.)
100
mA
Power Dissipation
Pd
200 (Note)
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VI(off)
-
-
0.5
V
VCC=5V, IO=100µA
Input Voltage
VI(on)
1.1
-
-
V
VO=0.3V, IO=5mA
Output Voltage
VO(on)
-
0.1
0.3
V
IO/II=5mA/0.25mA
Input Current
II
-
-
3.6
mA
VI=5V
Output Current
IO(off)
-
-
0.5
uA
VCC=50V, VI=0V
DC Current Gain
GI
80
-
-
-
VO=5V, IO=10mA
Input Resistance
R1
1.54
2.2
2.86
k
Ω
-
Resistance Ratio
R2/R1
17
21
26
-
-
Transition Frequency
fT
-
250
-
MHz
VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
Ordering Information
Device
Package
Shipping
Marking
HBC123JS6R
SOT-363
(Pb-free)
3000 pcs / Tape & Reel
7M



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