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EF10C01 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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EF10C01 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 3 page ![]() CYStech Electronics Corp. Spec. No. : C749E3 Issued Date : 2006.07.26 Revised Date : Page No. : 1/3 EF10CXXE3 CYStek Product Specification 10Amp. Glass Passivated Efficient Fast Recovery Rectifiers EF10CXXE3 Series Features • Fast switching for high efficiency • Low forward voltage drop • High current capability • Low reverse leakage current • High surge current capability Mechanical Data • Case: Molded plastic, TO-220AB • Terminals: Solderrable per MIL-STD-202 method 208 • Epoxy: UL 94V-0 rate flame retardant • Mounting Position: Any • Weight: 2.24 grams Maximum Ratings and Electrical Characteristics ( Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Type Parameter Symbol EF 10C01 EF 10C02 EF 10C03 EF 10C05 EF 10C06 Units Maximum Recurrent peak reverse voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 140 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum instantaneous forward voltage@ IF=5A VF 0.95 1.25 1.85 V Maximum Average forward rectified current @ TL=100℃ I(AV) 10 A Peak forward surge current @8.3ms single half sine wave superimposed on rated load (JEDEC method) IFSM 100 A Maximum DC reverse current VR=VRRM,TJ=25℃ VR=VRRM,TJ=125℃ IR 10 250 µA Diode junction capacitance @ f=1MHz and applied 4V reverse voltage CJ 65 pF Maximum reverse recovery time@ IF=0.5A, IR=1A, Irr=0.25A trr 25 ns Typical thermal resistance, junction to lead RθJC 2.2 ℃ /W Storage temperature Tstg -55 ~ +150 ℃ Operating temperature TJ -55 ~ +150 ℃ |
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