IXKC25N80C datasheet(1/4 Pages) IXYS

Part #	IXKC25N80C

Description	N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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20080526a

IXKC 25N80C

IXYS reserves the right to change limits, test conditions and dimensions.

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise speciﬁed)

min.

typ.

max.

R

DSon

V

GS = 10 V; ID = ID90

135

150

m

Ω

V

GS(th)

V

DS = VGS; ID = 2 mA

2

4

V

I

DSS

V

DS = VDSS; VGS = 0 V

T

VJ =

25°C

T

VJ = 125°C

250

50

µA

I

GSS

V

GS = ± 20 V; VDS = 0 V

±200

nA

C

iss

C

oss

C

rss

V

GS = 0 V; VDS = 25 V; f = 1 MHz

4600

2500

120

pF

Q

g

Q

gs

Q

gd

V

GS = 0 to 10 V; VDS = 640 V; ID = ID90

180

20

80

nC

t

d(on)

t

r

t

d(off)

t

f

V

GS = 10 V; VDS = 640 V; TVJ = 125°C

I

D = 35 A; RG = 2.2 Ω

25

75

10

ns

R

thJC

0.5

K/W

MOSFET

Symbol

Conditions

Maximum Ratings

V

DSS

T

VJ = 25°C

800

V

GS

± 20

V

I

D25

I

D90

T

C = 25°C

T

C = 90°C

25

18

A

E

AS

E

AR

T

J start = 25°C; single pulse; ID = 3.4 A

T

J start = 25°C; repetitive; ID = 17 A

670

0.5

mJ

dV/dt

V

DS < VDSS; IF = 35 A; TVJ = 150°C

d

IR /dt = 100 A/µs

6

V/ns

I

D25

= 25

A

V

DSS

= 800

V

R

DS(on) max = 150 mΩ

CoolMOS™ 1) Power MOSFET

ISOPLUSTM Package

D

G

S

N-Channel Enhancement Mode

Low R

DSon, high VDSS MOSFET

Electrically Isolated Back Surface

ISOPLUS220

G

D

S

isolated

back surface

E72873

Features

• Silicon chip on Direct-Copper-Bond

substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

• 3rd generation CoolMOS™ 1) power

MOSFET

- high blocking capability

- lowest resistance

- avalanche rated for unclamped

inductive switching (UIS)

• Low thermal resistance due to

reduced chip thickness

• Low drain to tab capacitance (<30 pF)

Applications

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

Advantages

• Easy assembly: no screws or isolation

foils required

• Space savings

• High power density

1) CoolMOS™ is a trademark of

Inﬁneon Technologies AG.

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