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2SC2768 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC2768 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 4 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2768 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=100µA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.8A 1.2 V ICBO Collector cut-off current VCB=250V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=5V 20 Switching times ton Turn-on time 1.0 µs tstg Storage time 2.0 µs tf Fall time IC=4A; IB1=-IB2=-0.4A RL=20A 1.0 µs |
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