IRLS4030TRLPBF datasheet(2/10 Pages) IRF

2 / 10 page

IRLS/SL4030PbF

www.irf.com

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.05mH

RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 110A, di/dt ≤ 1330A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniquea refer to applocation

note # AN- 994 echniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

RθJC value shown is at time zero.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.10

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

3.4

4.3

Ω

–––

3.6

4.5

VGS(th)

Gate Threshold Voltage

1.0

–––

2.5

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

RG(int)

Internal Gate Resistance

–––

2.1

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

320

–––

Total Gate Charge

–––

130

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

330

–––

td(off)

Turn-Off Delay Time

–––

110

–––

Fall Time

–––

170

–––

Ciss

Input Capacitance

––– 11360 –––

Coss

Output Capacitance

–––

670

–––

Crss

Reverse Transfer Capacitance

–––

290

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)h –––

760

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)g

–––

1140

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 85V,

–––

TJ = 125°C

IF = 110A

Qrr

Reverse Recovery Charge

–––

TJ = 25°C

di/dt = 100A/µs

–––

130

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

3.3

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 4.5V, ID = 92A

180

730

µA

–––

ID = 110A

RG = 2.7

Ω

VGS = 4.5V

VDD = 65V

ID = 110A, VDS =0V, VGS = 4.5V

TJ = 25°C, IS = 110A, VGS = 0V

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 110A

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS = 50V

Conditions

VGS = 4.5V

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V

Conditions

VDS = 25V, ID = 110A

ID = 110A

VGS = 16V

VGS = -16V

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