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BAS70W Datasheet(PDF) 1 Page - Diodes Incorporated |
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BAS70W Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 1 page ![]() DS30113 Rev. A-2 1 of 1 BAS70W/ -04/ -05/ -06 · Low Turn-on Voltage · Fast Switching · PN Junction Guard Ring for Transient and ESD Protection · Ultra-Small Surface Mount Package Features A E J L M B C H G D K TOP VIEW Mechanical Data · Case: SOT-323, Molded Plastic · Terminals: Solderable per MIL-STD-202, Method 208 · Polarity: See Diagrams · Marking: See Diagrams · Mounting Position: Any · Approx. Weight: 0.006 grams BAS70W/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOT-323 Dim Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Test period <3000 ms. Electrical Ratings @ TA = 25°C unless otherwise specified BAS70W Marking: K73 BAS70W-04 Marking: K74 BAS70W-05 Marking: K75 BAS70W-06 Marking: K76 Characteristic Symbol BAS70W Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 V RMS Reverse Voltage VR(RMS) 49 V Forward Continuous Current (Note 1) IF 70 mA Non-Repetitive Peak Forward Surge Current @ tp < 1.0s IFSM 100 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RqJA 625 K/W Operating Junction Temperature Range Tj -55 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Maximum Ratings and Electrical Characteristics, Single Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R 70 — — IR = 10 mA Forward Voltage VFM — 410 1000 mV tp <300µs, IF = 1.0mA tp <300µs, IF = 15mA Peak Reverse Current IRM ¾ 100 nA tp < 300µs, VR = 50V Junction Capacitance Cj ¾ 2.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr — 5.0 ns IF = IR = 10mA to IR = 1.0mA, Irr = 0.1 x IR, RL = 100 W |
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