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Document Number: 11004 Revision A- 5

Page 1 of 1

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BAS85T-01I

SILICON SCHOTTKY BARRIER DIODE

Mechanical Data

·

Glass case

·

Weight: 0.05g (approx)

Maximum Ratings

* Valid provided that electrodes are kept at ambient temperature.

·

For general applications

·

Low turn-on voltage

·

PN junction guard ring

Electrical Characteristics

C

A

B

Min

Max

A

3.4

3.6

B

1.40

1.50

C

0.20

0.40

All dimensions in mm

Characteristic

Symbol

Value

Unit

Continuous reverse voltage

30

V

Forward continuous current*

200

mA

Peak forward current *

300

mA

Surge forward current*

600

mA

Power dissipation*

250

mW

Junction temperature

125

°C

Operating temperature range

-65 to +125

°C

Storage temperature range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse breakdown voltage

10 µA pulses

30

—

—

V

Features