BC856B datasheet(2/3 Pages) DIODES

2 / 3 page

DS11207 Rev. 12 - 2

2 of 3

BC856A-BC858C

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

BC856

BC857

BC858

V(BR)CBO

-80

-50

-30

—

IC = 10

mA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3)

BC856

BC857

BC858

V(BR)CEO

-65

-45

-30

—

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 3)

V(BR)EBO

-5

—

IE = 1

mA, IC = 0

H-Parameters

Small Signal Current Gain

Current Gain Group A

Input Impedance

Current Gain Group A

Output Admittance

Current Gain Group A

Reverse Voltage Transfer Ratio

Current Gain Group A

hfe

hie

hoe

hre

—

200

330

600

2.7

4.5

8.7

1.5x10-4

2x10-4

3x10-4

—

µS

—

VCE = -5.0V, IC = -2.0mA,

f = 1.0kHz

DC Current Gain (Note 3)

Current Gain Group A

hFE

125

220

420

180

290

520

250

475

800

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

-75

-250

-300

-650

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

-700

-850

—mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

-600

—

-650

—

-750

-820

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current (Note 3)

BC856

BC857

BC858

ICES

ICBO

—

-15

-4.0

µA

VCE = -80V

VCE = -50V

VCE = -30V

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

100

200

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—3

—

VCB = -10V, f = 1.0MHz

Noise Figure

—

VCE = -5.0V, IC = 200µA,

RS = 2k

W, f = 1kHz,

Df = 200Hz

Notes:

3. Short duration pulse test used to minimize self-heating effect.

@ TA =25°C unless otherwise specified

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