D

S30056 Rev. 2P-5

1 of 1

DMBT9022

DMBT9022

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Ideal for Medium Power Amplification and

Switching

·

High Current Gain

Characteristic

Symbol

DMBT9022

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

5.0

V

Collector Current - Continuous (Note 1)

100

mA

Power Dissipation (Note 1)

225

mW

Thermal Resistance, Junction to Ambient (Note 1)

556

K/W

Operating and Storage and Temperature Range

-55 to +150

°C

Features

Maximum Ratings

°C unless otherwise specified

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

C

E

B

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: K1S

·

Weight: 0.008 grams (approx.)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.19

1.40

C

2.10

2.50

D

0.89

1.05

E

0.45

0.61

G

1.78

2.05

H

2.65

3.05

J

0.013

0.15

K

0.89

1.10

L

0.45

0.61

M

0.076

0.178

All Dimensions in mm

Notes:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

£ 300ms, duty cycle £ 2%.

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

50

¾

V

Collector-Emitter Breakdown Voltage

40

¾

V

Emitter-Base Breakdown Voltage

5.0

¾

V

Collector Cutoff Current

¾

500

nA

Emitter Cutoff Current

¾

500

nA

ON CHARACTERISTICS (Note 2)

DC Current Gain

270

630

¾

Collector-Emitter Saturation Voltage

¾

0.4

V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

2.0 Typ.

3.5

pF