IMX8 datasheet(1/2 Pages) DIODES

Part #	IMX8

Description	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 2 page

DS30304 Rev. A-2

1 of 2

IMX8

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary PNP Type Available

(IMT4)

·

Small Surface Mount Package

Characteristic

Symbol

IMX8

Unit

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

50

mA

Power Dissipation (Note 1)

Pd

225

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

555

°C/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

M

J

L

F

D

B C

H

K

B2

B1

E1

C2

E2

C1

KX8

Mechanical Data

·

Case: SOT-26, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: KX8

·

Weight: 0.016 grams (approx.)

SOT-26

Dim

Min

Max

Typ

A

0.35

0.50

0.38

B

1.50

1.70

1.60

C

2.70

3.00

2.80

D

¾¾

0.95

F

¾¾

0.55

H

2.90

3.10

3.00

J

0.013 0.10

0.05

K

1.00

1.30

1.10

L

0.35

0.55

0.40

M

0.10

0.20

0.15

All Dimensions in mm

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

120

¾¾

V

IC = 50

mA

Collector-Emitter Breakdown Voltage

V(BR)CEO

120

¾¾

V

IC = 1.0mA

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

¾¾

V

IE = 50

mA

Collector Cutoff Current

ICBO

¾¾

0.5

mA

VCB = 100V

Emitter Cutoff Current

IEBO

¾¾

0.5

mA

VEB = 4.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

180

¾

820

¾

IC = 2.0mA, VCE = 6.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾¾

0.5

V

IC = 10mA, IB = 1.0mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

¾

140

¾

MHz

VCE = 12V, IE = -2.0mA,

f = 100MHz

Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration test pulse used to minimize self-heating effect.

3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Device

Packaging

Shipping

IMX8-7

SOT-26

3000/Tape & Reel

Ordering Information (Note 3)

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