DS30104 Rev. C-2

1 of 2

MMBF170

MMBF170

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

·

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

Maximum Ratings

°C unless otherwise specified

Characteristic

Symbol

MMBF170

Units

Drain-Source Voltage

60

V

£ 1.0MW

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Pulsed

500

800

mA

Total Power Dissipation (Note 1)

°C

225

1.80

mW

mW/

°C

Thermal Resistance, Junction to Ambient

556

K/W

Operating and Storage Temperature Range

-55 to +150

°C

·

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: K6Z

·

Weight: 0.008 grams (approx.)

Mechanical Data

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

D

S

G

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.19

1.40

C

2.10

2.50

D

0.89

1.05

E

0.45

0.61

G

1.78

2.05

H

2.65

3.05

J

0.013

0.15

K

0.89

1.10

L

0.45

0.61

M

0.076

0.178

All Dimensions in mm

Electrical Characteristics

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

60

70

¾

V

mA

Zero Gate Voltage Drain Current

¾¾

1.0

µA

Gate-Body Leakage

¾¾

±10

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

0.8

2.1

3.0

V

mA

Static Drain-Source On-Resistance

¾¾

5.0

W

Forward Transconductance

80

¾¾

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

¾

22

40

pF

f = 1.0MHz

Output Capacitance

¾

11

30

pF

Reverse Transfer Capacitance

¾

2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

¾¾

10

ns

W

Turn-Off Delay Time

¾¾

10

ns

Note:1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width

£ 300ms, duty cycle £ 2%.