DF45112 datasheet(2/8 Pages) DYNEX

2 / 8 page

DF451

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SURGE RATINGS

Conditions

Max.

Units

3.5

61.25 x 103

2t for fusing

Surge (non-repetitive) forward current

FSM

Parameter

Symbol

10ms half sine; with 0% V

RRM, Tj = 150

2.8

39.2 x 103

2t for fusing

Surge (non-repetitive) forward current

FSM

10ms half sine; with 50% V

RRM, Tj = 150

THERMAL AND MECHANICAL DATA

Conditions

Max.

Units

oC/W

0.133

Anode dc

Clamping force 5.0kN

with mounting compound

Thermal resistance - case to heatsink

th(c-h)

0.02

Double side

Single side

Thermal resistance - junction to case

th(j-c)

Single side cooled

Symbol

Parameter

0.02

oC/W

Cathode dc

0.147

oC/W

Double side cooled

0.07

oC/W

stg

Storage temperature range

–55

150

5.5

4.5

Clamping force

Virtual junction temperature

Forward (conducting)

150

100

Symbol

Typ.

Units

Parameter

Forward voltage

RRM

Peak reverse current

Reverse recovery time

RA1

Recovered charge (50% chord)

Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

FRM

Forward recovery voltage

di/dt = 1000A/

µs, T

j = 125

oC-

At T

vj = 125

1.5

Ω

At T

vj = 125

1.6

1.7

-40

-25

µC

1.22

µs

At V

RRM, Tcase = 125

oC-

At 600A peak, T

case = 25

2.65

Conditions

Max.

F = 500A, diRR/dt = -80A/µs

case = 125

oC, V

R = 100V

CHARACTERISTICS

DF45112 Datasheet(PDF) 2 Page - Dynex Semiconductor

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