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GP401LSS18 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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GP401LSS18 Datasheet(HTML) 6 Page - Dynex Semiconductor |
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6 / 11 page ![]() GP401LSS18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11 TYPICAL CHARACTERISTICS Fig.5 Typical output characteristics Fig.6 Typical output characteristics Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current 0 100 200 300 600 700 800 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 500 400 0 100 200 300 600 700 800 0 1.0 2.0 3.0 4.0 5.0 6.0 Collector-emitter voltage, Vce - (V) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 500 400 0 400 50 100 Collector current, IC - (A) 0 300 350 400 Tcase = 25˚C VGE = ±15V VCE = 900V A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω A B C 150 200 250 50 100 150 200 250 300 350 0 400 50 100 Collector current, IC - (A) 0 50 350 Tcase = 125˚C VGE = ±15V VCE = 900V A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω A B C 100 150 200 250 300 500 400 450 150 200 250 300 350 |
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