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STS5N15F3 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS5N15F3 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STS5N15F3 Electrical ratings Doc ID 15472 Rev 2 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 150 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC=100 °C 3.2 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 2.5 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Thermal resistance junction-pcb max 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 140 V) 300 mJ |
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