MP03 XXX 175 Series

2/10

Symbol

Parameter

Conditions

Max.

Units

V

A

A

6800

5500

I

Surge (non-repetitive) on-state current

I

TSM

V

10ms half sine;

T

10ms half sine;

T

I

A

Symbol

Parameter

Conditions

Linear rate of rise of off-state voltage

200*

mA

V/

µs

On-state voltage

V

TM

I

Peak reverse and off-state current

To 67% V

At V

At 500A, T

Rate of rise of on-state current

V

T(TO)

Threshold voltage

V

0.98

From 67% V

Repetitive 50Hz

Gate source 10V, 5

Ω

Rise time 0.5

µs, T

m

Ω

0.75

At T

At T

r

T

On-state slope resistance

* Higher dV/dt values available, contact factory for particular requirements.

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

A

231000

V

V

150000

Units

Max.

1.3

V

30

100

A/

µs

Symbol

Parameter

Conditions

Units

Thermal resistance - case to heatsink

per Thyristor or Diode

R

th(j-c)

Virtual junction temperature

T

vj

T

sto

Storage temperature range

Mounting torque = 5Nm

with mounting compound

3 phase

halfwave

dc

Commoned terminals to base plate

AC RMS, 1min, 50Hz

Max.

0.23

Thermal resistance - junction to case

per Thyristor or Diode

R

th(c-hs)

0.05

Isolation voltage

V

isol

2.5

0.21

0.22

125

-40 to 125

kV

dI/dt

dV/dt

SURGE RATINGS - PER ARM

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS - THYRISTOR